The 40 Inventive Principles is a basic TRIZ tool that assists in problem-solving, generating new ideas, and creating innovative solutions. Genrich Altshuller developed the technique’s fundamentals by analyzing, classifying, and systematizing tens of thousands of patents.
40 Inventive Principles is a creative thinking tool that helps us to free from psychological inertia and makes us think “out-of-the-box”. 40P redirects the problem-solving process from guessing and intuitive decisions to creative analysis and innovative solutions generation. Here, we want to summarize how you and your team can benefit from the 40P tool:
The 40 Inventive Principles thinking tool is useful in various cases of parameter improvement. Some highlighted cases include:
From here, you can further explore and discover many other situations where the 40P thinking can be useful.
You are welcome to try our 40 Inventive Principles tool on PRIZ Playground.
40P PLAYGROUNDThis project applies Functional Modeling to analyze the single-wafer wet etch process in semiconductor manufacturing. The model shows that wet etch defects are not caused only by chemistry, but also by interactions between the wafer, liquid flow, air, rotation, rinsing, drying, drain, and chamber environment. Key challenges include incomplete wetting, trapped air or bubbles, residue and particle redeposition, evaporation-driven watermarks, and contamination during rinse or drying. The project identifies improvement directions such as better wafer pre-wetting, controlled airflow, reduced evaporation, optimized rinse and drying conditions, and alternative chamber concepts such as face-down processing in a shallow liquid bath.
The process is related to microelectronics - microchip manufacturing. The purpose of the process is to create a SiO2 layer on the surface of a Si wafer. Equipment: Vertical furnace to heat the wafers in the Q2 atmosphere and perform oxidation on the wafer surface. Process: The oxidation occurs on the front side and on the back side of the wafer Requirements: Create a SiO2 thin layer with a certain thickness and low sigma - low standard deviation of the thickness between the wafers and within the wafer Failure: Wafers from the lower zone have higher thickness and significantly higher within wafer sigma (standard deviation of the thickness within the wafer)
Wet cleaning is widely used in microchip manufacturing. Single wafer equipment is working as follows. A wafer rotates, and chemistry is poured from a movable nozzle. Water rinsing is performed at the end of the process. Loading of a new batch of the chemistry resulted in excursion - a strongly increased amount of defects was observed on the wafer after the processing. The project is dedicated to the failure analysis and creation of innovative solutions.
This project investigates particle-defect formation during SiO₂ dry etch. Functional modeling revealed that defects can be generated by two coupled mechanisms: chemical formation of SiO₂/SiOFₓ particles from SiF₄ interaction with moisture, and mechanical generation of particles by excessive ion bombardment and sputtering. The proposed improvement direction is to balance chemical etching and ion-assisted etching by properly adjusting the source and bias generators, reducing moisture, improving by-product evacuation, minimizing sputtering, and using pulsed or multi-step process recipes. The goal is to reduce particles and micromasking while maintaining etch rate, profile control, and process stability.
This project investigates how to increase the copper removal rate during Chemical Mechanical Planarization (CMP). Functional modeling revealed that increasing H₂O₂ alone is ineffective beyond an optimum level because rapid oxidation creates a thick, passivating Cu₂O/CuO layer that must be mechanically removed. The winning direction is to balance faster oxidation with stronger mechanical removal by optimizing pad speed, abrasive concentration, pressure, conditioning, and slurry transport.
Semiconductor devices are becoming more complex and expensive. But what exactly are we paying for when we buy a computer, cellphone, or any device containing a microchip? It’s not for radically new functions—the core components remain the same: transistors and interconnections. According to Moore’s law, transistors are getting smaller, with more interconnection layers added, making the manufacturing process longer and more costly. In reality, we’re paying for the inability of engineers to efficiently solve engineering challenges. This project leverages System Functional Modeling (SFM) to analyze the IC interconnection layer and Process Functional Modeling (PFM) to evaluate its manufacturing process. These analyses aim to deepen our understanding of both the device and the production process, generating innovative solutions for cost reduction and improved efficiency.
This project presents an innovative engineering solution for improving the corrosion resistance of dental implants. The proposed concept utilizes multi-layer ceramic and oxide coatings to provide long-term protection against corrosion, wear, and harsh oral conditions. By maintaining inner protective layers even after the outer layer degrades, the design aims to extend implant lifetime, improve reliability, and reduce the risk of implant failure. This concept was developed as part of the Engineering Thinking course in the Materials Engineering program.
Flash heating of a wafer is widely used in microchip manufacturing. The purpose of the process is to prevent the diffusion of ions and atoms. During the flash process, a wafer breakage occurs. The project's purpose is to learn and understand the mechanism of the wafer breakage and propose the solutions to prevent the wafer breakage
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